dsea 16-06bc dsec 16-06bc ? 2005 ixys all rights reserved hiperdynfred tm epitaxial diode isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified d pulse test: pulse width = 5 ms, duty cycle < 2.0 % e pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low cathode to tab capacitance (<15pf) z planar passivated chips z very short recovery time z extremely low switching losses z low i rm -values z soft recovery behaviour z epoxy meets ul 94v-0 applications z antiparallel diode for high frequency switching devices z antisaturation diode z snubber diode z free wheeling diode in converters and motor control circuits z rectifiers in switch mode power supplies (smps) z inductive heating z uninterruptible power supplies (ups) z ultrasonic cleaners and welders advantages z avalanche voltage rated for reliable operation z soft reverse recovery for low emi/rfi z low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch i fav = 2x8 a v rrm = 600 v t rr = 30 ns v rsm v rrm type v v 600 600 dsea 16-06bc 600 600 dsec 16-06bc preliminary data sheet symbol conditions maximum ratings i frms 19 a i favm t c = 110c; rectangular, d = 0.5 8 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 50 a e as t vj = 25c; non-repetitive 0.1 mj i as = 0.9 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.1 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c t l 1.6 mm (0.063 in) from case for 10 s 260 c p tot t c = 25c 60 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force with clip 11...65 / 2.5...15 n / lb weight 2g symbol conditions characteristic values typ. max. i r c t vj = 25c v r = v rrm 60 a t vj = 150c v r = v rrm 0.25 ma v f d i f = 8 a; t vj = 150c 1.65 v t vj = 25c 3.0 v r thjc 2.5 k/w r thch 0.4 k/w t rr i f = 1 a; -di/dt = 50 a/s; 30 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 12 a; -di f /dt = 100 a/s 1.4 1.9 a t vj = 100c dsea dsec 3 1 2 3 1 2 ds98825a (04/05) isoplus220 tm e153432 g d s isolated back surface
dsea 16-06bc dsec 16-06bc ? 2005 ixys all rights reserved fig. 3. peak reverse current i rm versus -di f /dt fig. 2. reverse recovery charge q r versus -di f /dt fig. 1. forward current i f versus v f fig. 4. dynamic parameters q r , i rm versus t vj fig. 5. recovery time t rr versus -di f /dt fig. 6. peak forward voltage v fr and t fr versus di f /dt fig. 7. transient thermal resistance junction-to-case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169 note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0 400 800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a
dsea 16-06bc dsec 16-06bc ? 2005 ixys all rights reserved dsea 16-06bc dsec 16-06bc isoplus220 outline notes: 1. all terminals are tin plated. 2. back surface (4) is electrically isolated from pins 1,2 and 3. pin connections: dsea: 1 - cathode 2 - anode 3 - cathode dsec: 1 -anode 2 - cathode 3 - anode isoplus220 outline
|
